We operate three AFM systems that enable us to characterize the surface topography of our samples. Other scanning modes such as conductive AFM and Kelvin probe force microscopy are also available.
This PDI-constructed system is used for the growth of epitaxial graphene on SiC at high temperatures (~1600 °C) by surface graphitization.
As part of PDI’s Core Research Area Nanoanalytics, and operating at the cross-section between the Microstructure Department and a recently-established Junior Research Group PHARAO combines in-situ x-ray diffraction and molecular beam epitaxy (MBE) in order to investigate epitaxial layers under most realistic conditions. Performed in-situ, under real growth conditions, and in real-time, research at the PHARAO beamline (BESSYII, Helmholtz-Zentrum Berlin) improves the understanding of fundamental growth processes.
The institute operates a total of thirteen Molecular Beam Epitaxy (MBE) reactors.
The Quantum Design MPMS 5XL SQUID uses a superconducting quantum interference device (SQUID) magnetometer to monitor very small changes in magnetic flux in order to determine the magnetic properties of samples.
Our Scienta-Omicron XPS system is used to analyse the elemental composition and chemical as well as electronic states at the surface of epitaxially grown materials.